2SA1832 transistor (pnp) features power dissipation p cm : 0.1 w (tamb=25 ) collector current i cm : -0.15 a collector-base voltage v (br)cbo : -50 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100 a, i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-100 a, i c =0 -5 v collector cut-off current i cbo v cb =-50v, i e =0 -0.1 a emitter cut-off current i ebo v eb =-5v, i c =0 -0.1 a dc current gain h fe(1) v ce =-6v, i c =-2ma 120 400 collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma -0.3 v transition frequency f t v ce =-10v, i c =-1ma 80 mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz 7 pf classification of h fe(1) rank y gr range 120-240 200-400 marking sy sg sot-523 1. base 2. emitter 3. collector 2s a1832 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
2s a1832 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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